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| PF01411B MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-434B (Z) 3rd Edition Nov. 1997 Application * For E-GSM class4 880 to 915 MHz * For 3.5 V nominal battery use Features * * * * High gain 3stage amplifier : 0 dBm input Lead less thin & Small package : 2 mm Max, 0.2cc High efficiency : 45% Typ at 35.5 dBm Wide gain control range : 70 dB Typ Pin Arrangement 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND 4 G G 1 G G Absolute Maximum Ratings (Tc = 25C) Item Supply voltage Supply current VAPC voltage Input power Operating case temperature Storage temperature Output power Symbol VDD I DD VAPC Pin Tc (op) Tstg Pout Rating 8 3 4 10 -30 to +100 -30 to +100 5 Unit V A V mW C C W PF01411B Electrical Characteristics (Tc = 25C) Item Frequency range Control voltage range Drain cutoff current Total efficiency 2nd harmonic distortion 3rd harmonic distortion Input VSWR Output power (1) Symbol f VAPC I DS T 2nd H.D. 3rd H.D. VSWR (in) Pout (1) Min 880 0.5 -- 40 -- -- -- 35.5 Typ -- -- -- 45 -45 -45 1.5 36.0 Max 915 2.2 100 -- -35 -35 3 -- Unit MHz V A % dBc dBc -- dBm Pin = 0dBm, VDD = 3.5V, VAPC = 2.2V, RL = Rg = 50, Tc = 25C Pin = 0dBm, VDD = 3.0V, VAPC = 2.2V, RL = Rg = 50, Tc = 85C Pin = 0dBm, VDD = 3.5V, VAPC = 0.5V, RL = Rg = 50, Tc = 25C Pin = 0dBm, VDD = 3.5V, Pout = 0 to 35.5dBm RL = Rg = 50, Tc = 25C Pin = 0dBm, VDD = 3 to 5.1V, Pout 35.5dBm, Vapc 2.2V GSM pulse. Rg = 50, Tc = 25C, Output VSWR = 6 : 1 All phases Pin = 0dBm, VDD = 3 to 5.1V, Pout 35.5dBm, Vapc 2.2V GSM pulse. Rg = 50, t = 20sec., Tc = 25C, Output VSWR = 10 : 1 All phases VDD = 8V, VAPC = 0V Pin = 0dBm, VDD = 3.5V, Pout = 35.5dBm, Vapc = control RL = Rg = 50, Tc = 25C Test Condition Output power (2) Pout (2) 33.5 34.2 -- dBm Isolation -- -- -40 -36 dBm Switching time tr, tf -- 1 2 s Stability -- No parasitic oscillation -- Load VSWR tolerance -- No degradation -- 2 PF01411B Package Dimensions Unit: mm 1.8 0.2 4 G 3 8.0 0.3 1 G (Upper side) 2 8.0 0.3 (7.8) 4 13.75 0.3 G G3 G 2 1 G (9.6) 1 (3.7) G G 2 (2.1) Pin arrangement 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND (3.7) 4 G G 3 (1.8) (1.3) (1.8) (1.6) (1.8) (1.3) (1.8) (2.225) (6.875) 13.75 0.3 (Bottom side) (2.975) (6.875) (2.1) (0.6) Remark: Coplanarity of bottom side of terminals are less than 0 +/- 0.1mm. Hitachi code RF-K EIAJ code JEDEC code 3 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
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